Bonded wafer substrate utilizing roughened surfaces for use in MEMS structures

ABSTRACT

A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 12/413,972, filed Mar. 30, 2009, currently pending, entitled“Bonded Wafer Substrate for Use in MEMS Structures,” which claims thebenefit of U.S. Provisional Patent Application No. 61/040,210, filedMar. 28, 2008, entitled “Bonded Wafer Substrate for Use in MEMSStructures,” the entire contents of all of which are incorporated byreference herein.

BACKGROUND OF THE INVENTION

An embodiment of the present invention relates generally to a method ofmanufacturing a semiconductor device, and more particularly, to a methodof manufacturing a silicon-on-insulator (SOI) wafer for use inmicroelectromechanical systems (MEMS).

Semiconductor wafer fabrication generally refers to the process ofmaking integrated circuits on silicon wafers. A typical semiconductorwafer is generally circular in plan view and has a diameter on the orderof 25-300 millimeters (mm). Individual electronic circuits or devicesare formed across at least one surface of the wafer and then the waferis typically cut (sawed or diced) into a plurality of individual “dies”for packaging into individual integrated circuits (ICs).

SOI semiconductors, dielectric isolation (DI) semiconductors, and bondedwafer semiconductor devices are generally known in the art. For example,basic known processes to bond semiconductor wafers include forming alayer of silicon dioxide (which may be a buried oxide layer) on onesilicon wafer, sometimes referred to as the “handle wafer,” placing asecond silicon wafer (device layer) on the silicon dioxide, andannealing (i.e., generally heating to and holding at a suitabletemperature and then cooling at a suitable rate) the stacked wafers toform a bonded wafer semiconductor device having a buried oxide layer.Other methods of forming SOI semiconductor wafers are also known.

The development of MEMS technology has provided the ability to combinemicroelectronic circuits and mechanical parts, such as cantilevers,membranes, holes, and the like, onto a single chip. MEMS chips may bedeveloped to provide, for example, inertia sensors (e.g., for use in anaccelerometer), radio frequency (RF) switches, and pressure sensors, andmay also be used in optics applications, such as for digital lightprocessing (DLP) televisions.

The MEMS chips are often manufactured using SOI wafers, wherein at leasta portion of the buried oxide layer is etched out as a sacrificiallayer. In the example of an inertia sensor, a proof mass is formed inthe device layer and is suspended from the device layer by one or moremembranes. Following the removal of the buried oxide layer, the proofmass is free to move in the resulting cavity.

Unfortunately, difficulties may arise to the extent that the proof massor the membranes may contact the top surface of the handle wafer.Typically, the bottom surface of the device layer and the top layer ofthe handle wafer are highly polished. As a result, the two surfaces areprone to sticking to one another by way of the electrostatic or van derWaals forces. This phenomenon is known as “stiction.”

It is desirable to manufacture a SOI wafer, and more specifically a MEMSdevice, such that the SOI substrate stiction may be eliminated orgreatly reduced between the handle wafer and device layer surfaces.

BRIEF SUMMARY OF THE INVENTION

Briefly stated, various embodiments of the present invention comprise amethod of manufacturing a semiconductor device. The method includesproviding a first semiconductor substrate having first and second mainsurfaces opposite to each other and providing a second semiconductorsubstrate having first and second main surfaces opposite to each other.A roughened surface is formed on at least one of the first main surfaceof the first semiconductor substrate and the second main surface of thesecond semiconductor substrate. A dielectric layer is formed on thefirst main surface of the semiconductor substrate and the secondsemiconductor substrate is disposed on the dielectric layer opposite tothe first semiconductor substrate. The second main surface of the secondsemiconductor substrate contacts the dielectric layer.

Other preferred embodiments of the present invention comprise a methodof manufacturing a semiconductor device. The method includes providing afirst semiconductor substrate having first and second main surfacesopposite to each other. A second semiconductor substrate is providedhaving first and second main surfaces opposite to each other. A cavityis formed from the second main surface of the second semiconductorsubstrate. A dielectric layer is formed on the first main surface of thesemiconductor substrate. The second semiconductor substrate is disposedon the dielectric layer opposite to the first semiconductor substrate.The second main surface of the second semiconductor substrate contactsthe dielectric layer. A bottom surface of the cavity is roughened.

Various other embodiments of the present invention comprise a SOI waferincluding a semiconductor substrate having first and second mainsurfaces opposite to each other, a dielectric layer disposed on at leasta portion of the first main surface of the semiconductor substrate, anda device layer having first and second main surfaces. The second mainsurface of the device layer is disposed on a surface of the dielectriclayer opposite to the semiconductor substrate. At least one of the firstmain surface of the semiconductor substrate and the second main surfaceof the device layer has a roughened surface.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing summary, as well as the following detailed description ofpreferred embodiments of the invention, will be better understood whenread in conjunction with the appended drawings. For the purpose ofillustration, there are shown in the drawings embodiments which arepresently preferred. It should be understood, however, that theinvention is not limited to the precise arrangements andinstrumentalities shown.

In the drawings:

FIG. 1A is an enlarged partial cross-sectional elevational view of a SOIwafer wherein the device layer includes a roughened surface inaccordance with a preferred embodiment of the present invention;

FIG. 1B is an enlarged partial cross-sectional elevational view of a SOIcavity wafer wherein the device layer includes a roughened surface inaccordance with a preferred embodiment of the present invention;

FIG. 1C is an enlarged partial cross-sectional elevational view of a SOIwafer wherein the handle wafer includes a roughened surface inaccordance with a preferred embodiment of the present invention;

FIG. 1D is an enlarged partial cross-sectional elevational view of a SOIwafer wherein both the device layer and the handle wafer includeroughened surfaces in accordance with a preferred embodiment of thepresent invention;

FIG. 2A is an enlarged partial cross-sectional elevational view of ahandle wafer following a roughening of the top surface;

FIG. 2B is an enlarged partial cross-sectional elevational view of thehandle wafer of FIG. 2A following deposition of a dielectric layer;

FIG. 2C is an enlarged partial cross-sectional elevational view of thehandle wafer of FIG. 2B following polishing of the top surface of thedielectric layer;

FIG. 2D is an enlarged partial cross-sectional elevational view of thehandle wafer of FIG. 2C following application of a device layer;

FIG. 3A is an enlarged partial cross-sectional elevational view of ahandle wafer following patterning and etching of the top surface;

FIG. 3B is an enlarged partial cross-sectional elevational view of thehandle wafer of FIG. 3A following deposition of a dielectric layer;

FIG. 3C is an enlarged partial cross-sectional elevational view of thehandle wafer of FIG. 3B following patterning and etching of the topsurface;

FIG. 4A is an enlarged partial cross-sectional elevational view of aroughened handle wafer following formation of a dielectric layer and anintermediate bonding layer;

FIG. 4B is an enlarged partial cross-sectional elevational view of thehandle wafer of FIG. 4A following polishing of the intermediate bondinglayer;

FIG. 4C is an enlarged partial cross-sectional elevational view of thehandle wafer of FIG. 4B following application of a device layer;

FIG. 5A is an enlarged partial cross-sectional elevational view of a SOIcavity wafer;

FIG. 5B is an enlarged partial cross-sectional elevational view of theSOI cavity wafer of FIG. 5A wherein a surface of the cavity has beenroughened; and

FIG. 5C is an enlarged partial cross-sectional elevational view of a SOIcavity wafer with a roughened surface having raised features therein.

DETAILED DESCRIPTION OF THE INVENTION

Certain terminology is used in the following description for convenienceonly and is not limiting. The words “right”, “left”, “lower”, and“upper” designate directions in the drawings to which reference is made.The words “inwardly” and “outwardly” refer to directions toward and awayfrom, respectively, the geometric center of the device and designatedparts thereof. The terminology includes the above-listed words,derivatives thereof, and words of similar import. Additionally, thewords “a” and “an”, as used in the claims and in the correspondingportions of the specification, mean “at least one.”

As used herein, reference to conductivity will be limited to theembodiment described. However, those skilled in the art know that p-typeconductivity can be switched with n-type conductivity and the devicewould still be functionally correct (i.e., a first or a secondconductivity type). Therefore, where used herein, reference to n or pcan also mean either n or p or p and n can be substituted therefor.

Furthermore, n⁺ and p⁺ refer to heavily doped n and p regions,respectively; n⁺⁺ and p⁺⁺ refer to very heavily doped n and p regions,respectively; n⁻ and p⁻ refer to lightly doped n and p regions,respectively; and n⁻⁻ and p⁻⁻ refer to very lightly doped n and pregions, respectively. However, such relative doping terms should not beconstrued as limiting.

Referring to the drawings in detail, wherein like reference numeralsindicate like elements throughout, there is shown in FIG. 1A a partialcross-sectional elevational view of a wafer 10 a manufactured inaccordance with various preferred embodiments of the present invention.A handle wafer 12 a includes a bottom surface 11 a and a top surface 13a. A dielectric layer 14 a is disposed on the top surface 13 a of thehandle wafer 12 a. A device layer 16 a is disposed on the dielectriclayer 14 a opposite the handle wafer 12 a. The device layer 16 a alsoincludes a top surface 17 a and a bottom surface 15 a. The bottomsurface 15 a of the device layer 16 a is roughened, rather thanpolished, which reduces the probability of stiction with the handlewafer 12 a once the dielectric layer 14 a is removed.

FIG. 1B shows a cavity SOI wafer 10 b. A cavity 20 b is formed in thehandle wafer 12 b from the top surface 13 b extending toward the bottomsurface 11 b. The dielectric material 14 b does not fill the cavity 20b, but rather caps the cavity 20 b. As before, a bottom surface 15 b ofthe device layer 16 b is roughened, unlike the smoother top surface 17b.

FIG. 1C shows a SOI wafer 10 c wherein the device layer 16 c includes asmooth bottom surface 15 c. However, the top surface 13 c of the handlewafer 12 c, on which the dielectric layer 14 c is disposed, isroughened. In FIG. 1D, both the top surface 13 d of the handle wafer 12d and the bottom surface 15 d of the device layer 16 d are roughened andin contact with the dielectric layer 14 d. In all embodiments, at leastone of the top surface 13 of the handle wafer 12 and the bottom surface15 of the device layer 16 is roughened to reduce stiction.

FIGS. 2A-2D illustrate a method of manufacturing a SOI wafer 110 inaccordance with one preferred embodiment of the present invention. InFIG. 2A, a handle wafer 112 having opposing bottom and top surfaces 111,113 is provided. Preferably, the handle wafer 112 is formed of silicon(Si). But, the handle wafer 112 may be formed of other materials such asgallium arsenide (GaAs), germanium (Ge), or the like. Initially, boththe bottom surface 111 and the top surface 113 may be relatively smooth.In the presently described embodiment, the top surface 113 is roughenedaccording to one or more of various techniques known in the art. Forexample, one may roughen the top surface 113 of the handle wafer 112 bylow roughness average (Ra) grinding and/or polishing. Alternatively, onemay employ deep reactive ion etching (DRIE) to roughen the surface 113.DRIE utilizes an ionized gas, or plasma, to remove material from thehandle wafer 112, such as, for example, sulfur hexafluoride (SF₆). Anisotropic wet chemical etch is also available for surface roughening.Wet etching includes the application of a liquid etchant to the surface113 of the handle wafer 112, such as, for example, a hydrofluoric (HF)acid.

In FIG. 2B, a dielectric or buried oxide layer 114 is formed on therough top surface 113 of the handle wafer 112. The dielectric layer 114may be applied using one of thermal growth, low pressure (LP) chemicalvapor deposition (CVD), plasma enhanced chemical vapor deposition(PECVD), atmospheric pressure chemical vapor deposition (APCVD), anddeposition. The dielectric layer 114 is preferably formed of an oxide.Alternatively, the dielectric layer 114 may be a nitride,silicon-oxynitride, or other known dielectrics. The dielectric layer 114on the handle wafer 112 may be formed by any known technique. Thedielectric layer 114 may also be made from multiple layers of the sameor different materials.

Referring to FIG. 2C, preferably, a top surface 114 p of the dielectriclayer 114 may be ground and/or polished sufficiently to leave apolished, flat, clean surface, which is ideally defect free. Forexample, a chemical-mechanical polishing (CMP) process may be used toplanarize the top surface 114 p of the dielectric layer 114. CMP employsa polishing pad in conjunction with an applied corrosive chemicalslurry. CMP is generally a finer process than grinding, though the topsurface 114 p of the dielectric layer 114 may first be ground, ifnecessary, using processes described above to achieve a desiredthickness of the dielectric layer 114.

Referring to FIG. 2D, a device layer 116 having bottom and top surfaces115, 117 can be formed by bonding or otherwise forming a semiconductorlayer on the dielectric layer 114. Preferably, the device layer 116 issilicon. But, the device layer 116 may be formed of other materials suchas gallium arsenide, germanium, or the like. For example, the devicelayer 116 is typically a doped p-type or n-type silicon layer.

When the device layer 116 is formed on the dielectric layer 114 oppositethe handle wafer 112, the stacked wafers 112, 116 are annealed (i.e.,generally heated to and held at a suitable temperature and then cooledat a suitable rate) to form the bonded-wafer semiconductor device 110.The annealing/bonding process may include heating the stacked wafers112, 116 in an annealing furnace for a number of minutes or hours. Forexample, the stacked wafers 112, 116 may be placed in an annealingfurnace at 800-1200° C. for few a minutes to several hours to cause thematerials to sufficiently bond. The annealing process may be performedin an inert ambient atmosphere, e.g., nitrogen gas, or in an oxidizingambient atmosphere, e.g., pure oxygen, oxygen/nitrogen mixture, steam orthe like. During a “wet” anneal, i.e., when steam is the ambient, thesteam is generated using a mixture of oxygen and hydrogen typicallyabove 800° C. Other known methods of bonding wafers 112, 116 to form SOIdevices 110 include using a liquid oxidant or multiple layers of oxidesand/or nitrides between the wafers prior to annealing.

Following the bonding of the wafers 112, 116, the top surface 117 of thedevice layer 116 is ground and polished, according to techniquesdescribed above, to the required thickness. The SOI device 110 is thusready for subsequent processing, such as formation of proof masses,removal of a portion of the dielectric layer 114, or the like.

It is apparent to one skilled in the art that various embodiments arenot limited to the method described above. For example, the top surface113 of the handle wafer 112 may be polished while the bottom surface 115of the device layer 116 may be roughened using one or more of theroughening techniques described above. Such a process would result in aSOI wafer 110 similar to the device shown in FIG. 1A. Additional stepsmay also be performed, such as formation of a cavity in the handle wafer112, as shown in FIG. 1B. Alternatively, both the top surface 113 of thehandle wafer 112 and the bottom surface 115 of the device layer 116 maybe roughened using one or more of the techniques described above. Such aprocess would result in a SOI wafer 110 similar to the device shown inFIG. 1D.

FIGS. 3A-3C illustrate another method of manufacturing a SOI wafer 210in accordance with further embodiments of the present invention. In FIG.3A, a handle wafer 212 having opposing bottom and top surfaces 111, 113is provided. As before, the handle wafer 212 is preferably formed ofsilicon, but may be formed of other materials such as gallium arsenide,germanium, or the like. Initially, both the bottom surface 211 and thetop surface 213 may be relatively smooth. The top surface 213 is thenmasked with a photoresist patterning layer (not shown) and etched toform a pattern of trenches 230 and mesas 232, preferably having a veryfine pitch, to roughen the top surface 213. The pattern is not limitedto the design shown in FIG. 3A but includes any pattern wherein thesurface 213 of the handle wafer 212 is sufficiently varied to reducestiction with the device layer 216 (FIG. 3C). The trenches 230 may beformed utilizing techniques known in the art such as plasma etching,RIE, sputter etching, vapor phase etching, chemical etching, DRIE, orthe like.

In FIG. 3B, a dielectric or buried oxide layer 214 is formed on thetrenched top surface 213 of the handle wafer 212. As described above,the buried oxide layer 214 may be applied using one of thermal growth,LPCVD, PECVD, APCVD, and deposition. The buried oxide layer 214 is againpreferably formed of an oxide but may be a nitride, silicon-oxynitride,or other known dielectrics.

Referring to FIG. 3C, a device layer 216 having bottom and top surfaces215, 217 can be formed by bonding or otherwise forming a semiconductorlayer on the buried oxide layer 214. As before, the device layer 216 ispreferably silicon, but may be formed of other materials such as galliumarsenide, germanium, or the like. For example, the device layer 216 istypically a doped p-type or n-type silicon layer. When the device layer216 is placed on the dielectric layer 214 opposite the handle wafer 212,the stacked wafers 212, 216 are annealed according to the techniquesdescribed above. Following the bonding of the wafers 212, 216, the topsurface 217 of the device layer 216 is ground and polished, according totechniques described above, to the required thickness. The SOI device210 is thus ready for subsequent processing, such as formation of proofmasses, removal of a portion of the dielectric layer 214, or the like.

It is apparent to one skilled in the art that various embodiments arenot limited to the method described above. For example, the top surface213 of the handle wafer 212 may be polished while the bottom surface 215of the device layer 216 may include the trench 230 and mesa 232 pattern.Additional steps may also be performed, such as formation of a cavity inthe handle wafer 212. Alternatively, both the top surface 213 of thehandle wafer 212 and the bottom surface 215 of the device layer 216 mayinclude trench 230 and mesa 232 patterns.

FIGS. 4A-4C illustrate yet another method of manufacturing a SOI wafer310 in accordance with still further embodiments of the presentinvention. In FIG. 4A, a dielectric layer 314 is formed on a roughenedtop surface 313 of a handle wafer 312 as described above. Anintermediate bonding layer 350 is formed on the top surface 314 p of thedielectric layer 314, which preferably substantially mirrors theroughening of the handle wafer 312. The intermediate bonding layer 350is preferably formed of a material suitable for assisting the bonding ofthe device layer 316 (FIG. 4C), such as tetraethyl orthosilicate (TEOS),suitable sol-gels, glass, or the like. In FIG. 4B, a top surface 350 pof the intermediate bonding layer 350 is smoothed using CMP or the likeas described above. The device layer 316 is formed in FIG. 4C on the topsurface 350 p of the intermediate bonding layer 350 using techniquesdescribed above.

It is apparent to one skilled in the art that various embodiments arenot limited to the method described above. For example, the top surface313 of the handle wafer 312 may be polished while the bottom surface 315of the device layer 316 may be roughened. Additional steps may also beperformed, such as formation of a cavity in the handle wafer 312.Alternatively, both the top surface 313 of the handle wafer 312 and thebottom surface 315 of the device layer 316 may be roughened.

Still another embodiment of the present invention is shown in FIGS.5A-5C. A SOI wafer 410 is shown in FIG. 5A formed from a handle wafer412, a dielectric layer 414, and a device layer 416. A cavity 420 isformed from the top surface 413 of the handle wafer 412 beneath thedielectric layer 414. Surfaces 411, 413 of the handle wafer 412 andsurfaces 415, 417 of the device layer 416 are shown in FIG. 5A withoutroughening. However, one or more of the surfaces 411, 413, 415, 417, orportions thereof, may be roughened according to embodiments of thepresent invention described above. The cavity 420 includes a bottomsurface 419 opposite to the dielectric layer 414.

As shown in FIG. 5B, the bottom surface 419 of the cavity 420 isroughened to reduce stiction. The roughening of the bottom surface 419is preferably performed using a combination of a chemical oxide growthusing highly oxidizing solutions (e.g., ammonia and hydrogen peroxidesolution, sulfuric acid and hydrogen peroxide solution, de-ionized waterand ozone, or the like) and an RIE silicon etch that, in conjunctionwith the chemical oxide, provides a heavily micromasked (black silicon)surface. However, alternative roughening methods may be used. FIG. 5Cshows the cavity 420 including several raised features 422 (e.g.pillars, mesas, or the like). Surfaces 421 of the raised features 422are also preferably roughened as described above.

The technique described above for roughening the bottom surface of thecavity 420 may also be utilized for other recessed features, such astrenches or the like. The recessed features may also be formed fromother surfaces (e.g., surfaces 411, 415, 417) of the handle wafer 412 ordevice layer 416. Similarly, the technique described above may be toother surfaces (e.g., surfaces 411, 413, 415, 417) or raised featuresthereon. This technique may thus be used to create antireflectioncoatings on various devices and sensors. Further, recessed features(such as the cavity 420) or raised features (such as the pillars 422)may be created after roughening of corresponding surfaces. For example,the cavity 420 may be formed after roughening of a portion of the topsurface 413 of the handle wafer 412, thus resulting in a roughenedbottom surface 419 upon completion of the cavity 420. An advantage istherefore provided in that a recessed feature can be etched to a moreprecise depth with a greater degree of roughness.

It should be recognized by those skilled in the art that the surfaceroughening techniques described above may be applied to any bondedsemiconductor substrate involving at least one plane wafer. For example,the techniques may be applied to devices having multiple layers of SOI,cavity SOI wafers, and engineered substrates. The techniques describedabove may also be used to form a buried antireflective layer in opticalor infrared (IR) applications. Further, roughening of the surfaces maybe confined to certain portions, areas, or the like, and need notblanket the entire surface.

It will be appreciated by those skilled in the art that changes could bemade to the embodiments described above without departing from the broadinventive concept thereof. It is understood, therefore, that theinvention is not limited to the particular embodiments disclosed, but itis intended to cover modifications within the spirit and scope of thepresent invention as defined by the appended claims.

1. A semiconductor on insulator (SOI) wafer comprising: (a) asemiconductor substrate having first and second main surfaces oppositeto each other; (b) a dielectric layer disposed on at least a portion ofthe first main surface of the semiconductor substrate; (c) a devicelayer having first and second main surfaces, the second main surface ofthe device layer being disposed on a surface of the dielectric layeropposite to the semiconductor substrate, the second main surface of thedevice layer being a roughened surface and the first main surface of thesemiconductor substrate being smooth, the semiconductor substrateincluding a cavity at least partially beneath the dielectric layer. 2.The SOI wafer of claim 1, further comprising: (d) at least one featureextending from a bottom surface of the cavity.
 3. The SOI wafer of claim2, wherein the at least one feature includes a roughened surface.
 4. TheSOI wafer of claim 1, wherein the cavity has a roughened bottom surface.5. The SOI wafer of claim 1, wherein the SOI wafer is amicroelectromechanical systems (MEMS) device.